David Sarnoff’s name is attached to an award given by the IEEE, the big technical professional association. This year, the recipient is an expert in high-frequency transistor technology.
Mark J.W. Rodwell will receive the 2010 IEEE David Sarnoff Award at a meeting in San Francisco in December.
IEEE said his contributions “have extended the limits of high-frequency radio, high-speed optical communications and powerful imaging applications.”
Rodwell is a research scientist who developed indium phosphide heterojunction bipolar transistors that are capable of operating at very high frequencies, IEEE wrote, and he “set the guidelines for further improvements enabling powerful radio, optical communications and imaging applications.”
The award recognizes him for development of millimeter-wave and sub-millimeter-wave InP bipolar transistors and integrated circuits.
The award was established in 1959 through agreement between RCA Corp. and the American Institute of Electrical Engineers; it was continued by the IEEE and in 1989, the sponsorship was picked up by the Sarnoff Corp.